Nitride semiconductor MOSFET and method for fabricating Nitride semiconductor MOSFET thereof,申请号KR20100092572-传众专利搜索

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发明名称	Nitride semiconductor MOSFET and method for fabricating Nitride semiconductor MOSFET thereof
摘要
申请公布号	KR101195259(B1)	申请公布日期	2012.10.29
申请号	KR20100092572	申请日期	2010.09.20
申请人		发明人
分类号	H01L21/336;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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