THE METHOD FOR CRYSTALLIZATION OF AMORPHOUS SILICON THIN FILM AND POLY SILICON THIN FILM TRANSISTOR

摘要

PURPOSE: A crystallization method of an amorphous silicon thin film and a polycrystalline silicon thin film transistor are provided to effectively crystallize amorphous silicon by using metal induced crystallization and metal induced lateral crystallization. CONSTITUTION: A self-assembled monolayer is formed on the upper side of an amorphous silicon thin film(S110). A nickel oxide thin film is formed on the exposed upper surface of the amorphous silicon thin film and the upper surface of the self-assembled monolayer(S120). The nickel oxide thin film is removed(S130). The amorphous silicon thin film is crystallized using the nickel oxide thin film(S140). [Reference numerals] (S110) Step for forming self-assembled monolayer; (S120) Step for forming a nickel oxide thin film; (S130) Step for removing the self-assembled monolayer and the nickel oxide thin film; (S140) Step for crystallizing an amorphous silicon thin film