发明名称 |
METHOD TO FORM EPITAXIAL FILMS OF COBALT ON SURFACE OF SEMICONDUCTOR SUBSTRATES |
摘要 |
FIELD: electricity. ^ SUBSTANCE: method to form epitaxial films of cobalt on the surface of semiconductor substrates includes application of a buffer copper sublayer onto the atomically clean surface Si(111)7ù7 under conditions of ultrahigh vacuum at ambient temperature, further generation in the mode of layerwise growth of ultrathin epitaxial films of Co(111)/Cu(111)/Si(111)7ù7 with thickness from 1 to 6 monolayers (ML) under the same conditions in the case when the thickness of the buffer copper sublayer makes 3.5 ML. At the thickness of the copper buffer layer from 4.5 and to 11.5 ML, arrays of epitaxial nanoislands of cobalt with monatomic and biatomic height are formed to the value of cobalt coating of the monolayer 3. ^ EFFECT: invention provides for the possibility of controlled generation of epitaxial cobalt nanostructures on a surface of a semiconductor substrate of silicon with specified magnetic properties, which is a technical result of the invention. ^ 4 dwg, 1 tbl, 3 ex |
申请公布号 |
RU2465670(C1) |
申请公布日期 |
2012.10.27 |
申请号 |
RU20110132688 |
申请日期 |
2011.08.03 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE AVTONOMNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "DAL'NEVOSTOCHNYJ FEDERAL'NYJ UNIVERSITET" |
发明人 |
IVANOV JURIJ PAVLOVICH;CHEBOTKEVICH LJUDMILA ALEKSEEVNA;ZOTOV ANDREJ VADIMOVICH;DAVYDENKO ALEKSANDR VJACHESLAVOVICH;IL'IN ALEKSEJ IGOREVICH |
分类号 |
B82B3/00;H01F10/16;H01F41/30 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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