| 摘要 |
<p>An array substrate (20) is provided with: a glass substrate (GS); gate wiring (26) formed on the glass substrate (GS); a gate electrode (24a) formed on the gate wiring (26); a gate insulating film (35) formed on the gate wiring (26) and the gate electrode (24a); a semiconductor film (36), which is formed on the gate insulating film (35), and has a channel region (CH); source wiring (27), which is formed on the gate insulating film (35), and intersects the gate wiring (26); a source electrode (24b), which is formed on the source wiring (27), and is connected to one end side of the semiconductor film (36); a drain electrode (24c), which is connected to the other end side of the semiconductor film (36), and is connected to the source electrode (24b) with the channel region (CH) therebetween; and a semiconductor film extending section (44), which is formed to the semiconductor film (36), and extends to as far as a region that overlaps at least a part of the source wiring (27) in planar view.</p> |
