发明名称 SEMICONDUCTOR DEVICE
摘要 <p>This semiconductor device is provided with: a first power supply node, which is supplied with a first power supply voltage for supplying power to the semiconductor device; a booster circuit (116), which performs boosting to a second power supply voltage; a power supply selecting circuit (150), which selects a first high power supply voltage that is a higher power supply voltage of the first power supply voltage and the second power supply voltage; a reference voltage generating circuit (118), which generates a reference voltage; and a discharge operation-related circuit (122), which receives the reference voltage, and relates to discharge processing of a node to which the second power supply voltage is applied. Provided is the semiconductor device wherein, in an uncontrollable state, an internal discharge circuit and discharge sequence can be normally operated using a high voltage as an operation power supply voltage, a high-voltage charge in the device is discharged, and storage data and the device are protected.</p>
申请公布号 WO2012144062(A1) 申请公布日期 2012.10.26
申请号 WO2011JP59905 申请日期 2011.04.22
申请人 RENESAS ELECTRONICS CORPORATION;SETOGAWA, JUN 发明人 SETOGAWA, JUN
分类号 G11C16/06;G11C16/02 主分类号 G11C16/06
代理机构 代理人
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