METHOD FOR PRODUCING SILICON CORE WIRE

摘要

In the present invention: a silicon core wire is cut out (S101) from a monocrystalline silicon or polycrystalline silicon cylindrical ingot; with the objective of eliminating residual warping arising during cutting processing, etching processing is performed (S102) by means of a mixed acid solution of hydrofluoric acid and nitric acid in a manner so that the amount removed is normally on the order of 50-200 µm; and the core wire is used (S103) in a precipitation reaction of polycrystalline silicon after etching. In the etching processing step, a thick oxide film is formed on the surface of the silicon core wire, and the film is a factor causing spark discharging. Thus, the present invention, a step (S104) is provided that eliminates the surface oxide film by cleaning the surface of the silicon core wire with a hydrofluoric acid solution following the step for eliminating processing warping of the surface by etching the silicon core wire using a mixed acid solution of hydrofluoric acid and nitric acid.