DEVICE AND METHOD FOR LARGE-SCALE DEPOSITION OF SEMI-CONDUCTOR LAYERS WITH GAS-SEPARATED HCL-FEEDING

摘要

The invention relates to a device and method for depositing II-VI- or III-V-semi-conductor layers on one or more substrates (4). Said device comprises a reactor housing, a treatment chamber (1), a susceptor (2) which is arranged in the treatment chamber (1) and which receives the substrate (4), a heating device (18) for heating the susceptors (2), a gas inlet element (7) for introducing, into the treatment chamber (1), treatment gases in the form of a hybrid, an organometallic component and a halogen component. Treatment gases which form adducts in the absence of the halogen components in the adduct forming area (M) in which the gas temperature (TB) is in an adduct formation temperature range are used. The halogen component is introduced into the treatment chamber (1) separately from the V- or VI-components, in particular from the hybrid in the treatment chamber (1) such that the V- or VI-components, in particular the hybrid, first comes into contact with the halogen components in the adduct formation area.