SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a first semiconductor element (10); a first thick plate portion (31) that is electrically connected to an electrode (11) on a lower surface side of the first semiconductor element, and is formed by a conductor; a second semiconductor element (20) that is arranged such that a main surface of the second semiconductor element faces a main surface of the first semiconductor element; a second thick plate portion (32) that is electrically connected to an electrode (21) on a lower surface side of the second semiconductor element, and is formed by a conductor; a third thick plate portion (41) that is electrically connected to an electrode (12) on an upper surface side of the first semiconductor element, and is formed by a conductor; a fourth thick plate portion (42) that is electrically connected to an electrode (22) on an upper surface side of the second semiconductor element, and is formed by a conductor; a first thin plate portion (33, 34) that is provided on the second thick plate portion, is formed by a conductor, and is thinner than the second thick plate portion; and a second thin plate portion (43, 44) that is provided on the third thick plate portion, is formed by a conductor, and is thinner than the third thick plate portion. The first thin plate portion and the second thin plate portion are fixed together and electrically connected.