发明名称 METHOD FOR CHEMICAL MECHANICAL PLANARIZATION OF A TUNGSTEN-CONTAINING SUBSTRATE
摘要 The titled method affords low dishing levels in the polished substrate while simultaneously affording high metal removal rates. The method utilizes an associated polishing composition. Components in the composition include a poly(alkyleneimine) such as polyethyleneimine, an abrasive, an acid, and an oxidizing agent, such as a per-compound.
申请公布号 KR101192742(B1) 申请公布日期 2012.10.26
申请号 KR20110013369 申请日期 2011.02.15
申请人 发明人
分类号 C09K3/14;H01L21/304 主分类号 C09K3/14
代理机构 代理人
主权项
地址