DEVICE AND METHOD FOR DEPOSITING SEMI-CONDUCTOR LAYERS WHILE ADDING HCL FOR SURPRESSING PARASITIC GROWTH

摘要

The invention relates to a device and a method for depositing II-VI- or III-V-semi conductor layers on one or more substrates (4). Said device comprises a reactor housing having a treatment chamber (1) arranged in the reactor housing, a susceptor (2) arranged in the process chamber (1) for receiving the substrate (4), a heating device (18) for heating the susceptor (2), a gas inlet element (7) comprising a gas mixture/supply device (34) provided with a source (31) for the metal-organic components, a source (30) for a hydrid, and a source (32) for the halogen components. The sources (30, 31, 32) are connected to the gas inlet element (7) in order to introduce the gases in separate gas flows into the heated treatment chamber (1). According to the invention, in order to reduce a parasitic deposition of a suspector upstream of the substrate, the gas inlet element (7) comprises several gas inlet areas (8, 9, 10) which are separate from each other. A halogen component inlet area (10), which is connected to the halogen component source (32), is arranged directly in front of a heated surface section (15) of the treatment chamber and is the nearest to said surface section.