AN ARRANGEMENT FOR MANUFACTURING CRYSTALLINE SILICON INGOTS

摘要

The present invention relates to an arrangement for manufacturing of crystalline silicon ingots by directional solidification which comprises a furnace with a hot zone able to house at least one crucible and which is sealed against the ambient air atmosphere, where the hot zone comprises: i) heating means for heating the crucible, ii) an outlet for evacuating gas from the hot zone of the furnace, iii) an inlet for supplying purge gas, iv) a bottom support structure for carrying the crucible, v) a top-shield, vi) a circumferential support structure, and vii) a gas shield arrangement within the hot zone of the furnace, wherein the gas shield arrangement comprises: a circumferential frame structure with a flat horizontal planar upper surface facing the top shield, and which is placed on top of the circumferential support structure, and a circumferential hood attached to and extending downward from the top shield to a distance above the flat planar upper surface of the circumferential frame structure and thus forming a continuous slot along the periphery of the circumferential hood at a distance from the crucible wall, and the inlet for purge gas is positioned to supply purge gases under the hood.