NITRIDE SEMICONDUCTOR DEVICE

摘要

The purpose of the present invention is to prevent breakage of a gate insulating film of a MOS device and to provide a nitride semiconductor device which has improved reliability. An SBD metal electrode (30), which is provided between a drain electrode (26) and a gate electrode (28), is configured so as to form a Schottky junction with an AlGaN layer (20). In addition, the SBD metal electrode (30) and a source electrode (24) are connected and electrically short-circuited with each other. Consequently, when an off signal is inputted to the gate electrode (28), a MOSFET part (32) is turned to an off state and the drain-side voltage of the MOSFET part (32) becomes close to the voltage of the drain electrode (26). When the voltage of the drain electrode (26) increases, the voltage of the SBD metal electrode (30) becomes lower than the drain-side voltage of the MOSFET part (32) and thus the drain side of the MOSFET part (32) and the drain electrode (26) are electrically disconnected from each other by the SBD metal electrode (30).