| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a processing method capable of exposing an electrode from a rear surface of a silicon substrate without etching a silicon dioxide film covering the electrode and the electrode. <P>SOLUTION: A processing method of an electrode-embedded wafer includes: a protective member sticking step of sticking a protective member to a surface of a wafer; a step of grinding a rear surface of a silicon substrate 21 without exposing an electrode 214; and a step of exposing the electrode to the rear surface of the silicon substrate by etching the rear surface of the silicon substrate with an etching liquid. The etching step includes a step of incompletely exposing the electrode in which a silicon dioxide film 215 is covered to the rear surface of the silicon substrate by etching the silicon substrate using an etching liquid having a high etching rate for the silicon and a step of protruding the electrode covered by the silicon dioxide film from the rear surface of the silicon substrate by etching the silicon and etching the silicon substrate using an etching liquid having a low etching rate for the silicon dioxide film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
