发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To quickly dry a substrate without generating destruction of a pattern formed on the surface of the substrate. <P>SOLUTION: When drying wafers W, first inclination means 33 controls a lifter 8 so that the wafers W are inclined in a direction vertical to the surface of the lifter 8 holding a plurality of wafers W respectively having patterns formed on respective surfaces in a vertical posture in a state that N2 is supplied from an N2 supply nozzle 28. Then, second inclination means 40 controls the lifer 8 so that the lifter 8 is inclined in a direction horizontal to the surfaces of the wafers W. Since a liquid pool 80 left in each pattern groove 72 is allowed to flow into a groove bottom 73 and discharged from a pattern side face 71, remaining liquid can be efficiently discharged. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012209285(A) 申请公布日期 2012.10.25
申请号 JP20110071303 申请日期 2011.03.29
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 MIYAMAWARI HIDEAKI;HONJO ICHIHIRO
分类号 H01L21/304;H01L21/027;H01L21/306 主分类号 H01L21/304
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