发明名称 METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD
摘要 A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.
申请公布号 US2012267633(A1) 申请公布日期 2012.10.25
申请号 US201213535762 申请日期 2012.06.28
申请人 HAYASHI NAOKI;ARAI TOSHIAKI;SONY CORPORATION 发明人 HAYASHI NAOKI;ARAI TOSHIAKI
分类号 H01L29/786;H01L29/04 主分类号 H01L29/786
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