发明名称 WAFER LEVEL PACKAGE MATERIAL FOR SURFACE ACOUSTIC WAVE DEVICE, SURFACE ACOUSTIC WAVE DEVICE JUNCTION WAFER USING PACKAGE MATERIAL, SURFACE ACOUSTIC WAVE DEVICE CUT FROM JUNCTION WAFER, AND MANUFACTURING METHODS OF PACKAGE MATERIAL, JUNCTION WAFER, AND SURFACE ACOUSTIC WAVE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a package material which forms holes accurately, each of which has a diameter that is exactly the same as a target diameter, when holes are formed in the package material serving as a cap substrate for a surface acoustic wave device and achieves excellent heat radiation performance, a junction wafer of a wafer level package surface acoustic wave device manufactured from the package material, the wafer level package surface acoustic wave device which is obtained by being cut from the junction wafer, achieves the size and height reduction while securing the electric characteristics and the reliability, and enables module mounting, and manufacturing methods of the package material, the junction wafer, and the surface acoustic wave device. <P>SOLUTION: In a wafer level package material 1 for a surface acoustic wave device, holes 3 are formed at least on a single crystal piezoelectric substrate 2 where piezoelectricity is eliminated and Li is diffused from the exterior part of the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012209718(A) 申请公布日期 2012.10.25
申请号 JP20110073227 申请日期 2011.03.29
申请人 SHIN ETSU CHEM CO LTD 发明人 TANNO MASAYUKI
分类号 H03H9/25;H01L41/08;H01L41/09;H01L41/18;H01L41/22;H03H3/08 主分类号 H03H9/25
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