CLEANING METHOD OF THIN FILM FORMATION APPARATUS, THIN FILM FORMATION METHOD, AND THIN FILM FORMATION APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a cleaning method and the like of a thin film formation apparatus which improves the etching rate for extraneous matter adhered to the interior of the apparatus and the selection ratio thereby reducing a burden to a gas supply device.

SOLUTION: A control part 100 controls a heater for heat-up 16 to heat the interior of a reaction tube 2 to a predetermined temperature and supplies a cleaning gas containing a fluorine gas and a silane gas from a processing gas introduction tube 17 to the reaction tube 2 with the reaction tube 2 heated to the predetermined temperature. The supplied cleaning gas is activated in the reaction tube 2 and removes extraneous matter adhered to the interior of a thin film formation apparatus 1 thereby cleaning the interior of the thin film formation apparatus 1.

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