| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetic storage element capable of performing high-reliability writing operation by suppressing wrong inversion of data in the magnetic storage element in a half-selected state, and a magnetic storage device using the same. <P>SOLUTION: A recording layer 3 having an axis 91 of easy magnetization and an axis 92 of hard magnetization has the entire area in plan view overlapping at least one of a first conductive layer WT and a second conductive layer BL. First end points TP and BP of a first segment which overlaps the recording layer 3 to a maximum dimension in plan view along the axis 91 of easy magnetization do not overlap the second conductive layer BL in plan view. At least one of second end points LP and RP as a pair of end points of a second segment which passes the middle point of the first segment, crosses the first segments at right angles in plan view, and overlaps the recording layer 3 in plan view does not overlap the first conductive layer WT in plan view. <P>COPYRIGHT: (C)2013,JPO&INPIT |
