| 摘要 |
The invention relates to technology for BiNbOcrystals production and can be used for the creation of the functional electronics elements. A method for growing of BiNbOcrystals includes charge preparation from the stoichiometric mixture of oxides, melting this mixture at the temperature of ~ 1300 °C for 1-2 hours, the crystal growth is carried out by pulling from the melt on a seed by the Czochralski method at a rate of 0.5-6 mm / h. The resulting crystals are quite large - more than 3 cm, they are transparent, without the twins and have not defects that can be observed visually. |
