| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress an adhesion amount of a deposit to a back surface of a substrate by controlling a temperature of a ring member. <P>SOLUTION: Capacity coupling type plasma etching equipment comprises: a focus ring 5 provided on a placing table 3 so as to surround a substrate placing region 32 of the placing table 3, for adjusting a state of plasma; a ring-shaped insulating member 6 provided between an upper surface of the placing table 3 and a lower surface of the focus ring 5, along the focus ring 5; and a heat transmission member 7 provided at a position adjacent to the insulating member 6 in a radial direction of a wafer W, between the upper surface of the placing table 3 and the lower surface of the focus ring 5, so as to closely contact the upper surface of the placing table 3 and the lower surface of the focus ring 5. During plasma processing, heat of the focus ring 5 is transmitted to the placing table 3 via the heat transmission member 7 to allow the focus ring 5 to be cooled, thereby reducing an adhesion amount of a deposit to a back surface of the wafer W. <P>COPYRIGHT: (C)2013,JPO&INPIT |
