| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve non-dependency on polarization, and an increase in wavelength of a light-emitting wavelength and a light-absorbing wavelength of an optical semiconductor device in terms of distortion. <P>SOLUTION: The optical semiconductor device includes: a semiconductor substrate having a first lattice constant; a quantum dot which is formed in the upper part of the semiconductor substrate and has a second lattice constant larger than the first lattice constant; a side barrier which surrounds the side face of the quantum dot in the upper part of the semiconductor substrate and has a third lattice constant smaller than the first lattice constant; and a first distortion relaxing layer which is formed in contact with the quantum dot and the side barrier in the upper part of the semiconductor substrate, and has a fourth lattice constant that is larger than the first lattice constant and is smaller than the second lattice constant. <P>COPYRIGHT: (C)2013,JPO&INPIT |
