| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of achieving improvement of a reading margin of data. <P>SOLUTION: A controlling circuit selects a first memory cell in which a reading current flowing after a selection transistor is turned on becomes a maximum value as a first reference cell from a first cell array under a state that the same first logic causing a resistance value to increase is stored in all of a plurality of first memory cells. The controlling circuit selects a second memory cell in which a reading current flowing after the selection transistor is turned on becomes a maximum value as a second reference cell from a second cell array under a state that the same first logic causing the resistance value to increase is stored in all of a plurality of second memory cells. A first reference current setting circuit sets a current obtained by adding a first adjustment current to the reading current of the first reference cell as a first reference current. A second reference current setting circuit sets a current obtained by adding a second adjustment current to the reading current of the second reference cell as a second reference current. <P>COPYRIGHT: (C)2013,JPO&INPIT |
