| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide manufacturing methods of a semiconductor device and a ferroelectric element capable of controlling orientation and easy to be employed in a liquid process. <P>SOLUTION: A semiconductor device manufacturing method according to the present invention is the manufacturing method of a semiconductor device including a source electrode and a drain electrode, an organic semiconductor film arranged between the source electrode and the drain electrode and having a channel part, a gate electrode, and a gate insulation film arranged between the channel part and the gate electrode, the method comprising: a step of heating the channel part to a first temperature; and a step of forming the gate insulating film by a coating process in which a liquid droplet material including insulative polymer of a second temperature lower than the first temperature is arranged on the organic semiconductor film of the first temperature and extended in a constant direction. <P>COPYRIGHT: (C)2013,JPO&INPIT |
