| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor element and a method of manufacturing the same capable of achieving a structure being suitable for flip-chip bonding and not causing excess growth. <P>SOLUTION: An optical semiconductor element has: a first terrace structure with an inclined lateral face, the first terrace structure having a first mesa stripe including a lamination structure obtained by sequentially laminating at least a semiconductor active layer and a semiconductor layer with a second conductivity type reverse to a first conductivity type, and a high-resistance semiconductor layer into which a lateral face of the first mesa stripe is embedded, on a semiconductor layer with the first conductivity type provided on a semiconductor substrate; and a second terrace structure with an inclined lateral face, the second terrace structure having a second mesa stripe being parallel and independent to the first mesa stripe and having the same lamination structure as the first mesa stripe, and a high-resistance semiconductor layer into which a lateral face of the second mesa stripe is embedded. A first electrode connected with the semiconductor layer with the second conductivity type of the first mesa stripe is provided on a flat surface of the first terrace structure. A second electrode connected with the semiconductor layer with the first conductivity type exposed between the first terrace structure and the second terrace structure and extending to a flat part of the second terrace structure is provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
