发明名称 |
GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.7×10−3, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than −10° and equal to or smaller than 10° in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided. |
申请公布号 |
US2012267606(A1) |
申请公布日期 |
2012.10.25 |
申请号 |
US201213526061 |
申请日期 |
2012.06.18 |
申请人 |
ISHIBASHI KEIJI;YOSHIZUMI YUSUKE;MINOBE SHUGO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ISHIBASHI KEIJI;YOSHIZUMI YUSUKE;MINOBE SHUGO |
分类号 |
H01L33/06;C01B21/06;C30B23/02;C30B25/18;C30B29/40;H01L21/20;H01L29/04;H01L33/18 |
主分类号 |
H01L33/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|