发明名称 |
METHOD OF CLEANING THIN FILM FORMATION APPARATUS, THIN FILM FORMATION METHOD, THIN FILM FORMATION APPARATUS, AND PROGRAM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of cleaning a thin film formation apparatus or the like capable of efficiently cleaning the thin film formation apparatus. <P>SOLUTION: First, deposit deposited inside an apparatus is removed by supplying cleaning gas containing hydrogen fluoride in a reaction tube 2. Next, an oxidation step of oxidizing silicofluoride which is deposited inside the apparatus is performed by supplying oxygen radical in the reaction tube 2. Then, an oxide removal step of removing the oxidized silicofluoride is performed by supplying the cleaning gas containing the hydrogen fluoride in the reaction tube 2. Then, the oxidation step and the oxide removal step are repeated a plurality of times. Thereby, a thin film formation apparatus 1 is efficiently cleaned. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012209585(A) |
申请公布日期 |
2012.10.25 |
申请号 |
JP20120158123 |
申请日期 |
2012.07.13 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
SATO JUN;KIKUCHI KIYOTAKA;MURAKAMI HIROKI;NAKAJIMA SHIGERU;HASEBE KAZUHIDE |
分类号 |
H01L21/316;C23C16/44;H01L21/31 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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