| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an IGBT capable of raising a degree of freedom of setting of threshold voltage while suppressing deterioration of channel mobility. <P>SOLUTION: An IGBT includes: a groove provided in a silicon carbide semiconductor layer; a first conductivity type body area provided in the silicon carbide semiconductor layer; and an insulator film which covers at least the side wall surface of the groove, in which the side wall surface of the groove is the surface whose off angle to a ä0001} surface is 50° or more and 65° or less, the side wall surface of the groove includes the surface of the body area, the insulator film contacts the surface of the body area at least on the side wall surface of the groove, and concentration of first conductivity type impurity in the body area is 5×10<SP POS="POST">16</SP>cm<SP POS="POST">-3</SP>or more. <P>COPYRIGHT: (C)2013,JPO&INPIT |
