发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem of a power semiconductor device, in which occurrence of resonance noise cannot be suppressed even if a power semiconductor chip is connected to wiring by using a band-like connection conductor having a rectangular cross section instead of wire bonding. <P>SOLUTION: A first stage 18 on which a semiconductor chip 7, in which a chip electrode terminal 8 is arranged on a surface, is placed, and a wiring stage 17 having wiring 11 and a wiring terminal 10 connected to the wiring, are so arranged that a protruding part of a bent metal connection plate 9, with one end edge jointed to the wiring terminal, abuts with the chip electrode terminal. While measuring an electric signal by activating the semiconductor chip, an interval between the first stage and the wiring stage is changed so that the position with which the protruding part of the metal connection plate abuts is slid. Based on the measured electric signal, the interval between the first stage and the wiring stage is fixed, for fixing the position with which the protruding part of the metal connection plate abuts. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012209444(A) 申请公布日期 2012.10.25
申请号 JP20110074426 申请日期 2011.03.30
申请人 PANASONIC CORP 发明人 SHIRAISHI TSUKASA
分类号 H01L21/60 主分类号 H01L21/60
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