发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem that a failure occurs in a pattern when a core insulating film which is to be a profile material for forming a cylinder type electrode is removed at a wafer edge part at which defocus occurs at the time of cylinder hole formation when forming a capacitor having a cylinder type electrode that is held by a support film. <P>SOLUTION: An opening part of a support film 27 formed to remove a core insulating film 26 is not formed at a wafer edge part where defocus occurs. A mat width Mb larger than a mat width Ma of an ordinary exposure part is preferred to be formed, so that the core insulating film 26 remains under the support film 27 of the wafer edge part. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012209350(A) 申请公布日期 2012.10.25
申请号 JP20110072468 申请日期 2011.03.29
申请人 ELPIDA MEMORY INC 发明人 UENO HISANORI
分类号 H01L21/8242;H01L21/027;H01L27/108 主分类号 H01L21/8242
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