发明名称 |
MECHANISMS FOR FORMING COPPER PILLAR BUMPS USING PATTERNED ANODES |
摘要 |
This disclosure relates to a bump structure on a substrate including a copper layer, wherein the copper layer fills an opening created in a dielectric layer and a polymer layer. The bump structure further includes an under-bump-metallurgy (UBM) layer lines the opening and the copper layer is deposited over the UBM layer. The bump structure further includes a surface of the copper layer facing away from the substrate is curved. This disclosure also relates to two bump structures with different heights on a substrate where a thickness of the first bump structure is different than a thickness of the second bump structure. This disclosure also relates to a semiconductor device including a bump structure.
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申请公布号 |
US2012267781(A1) |
申请公布日期 |
2012.10.25 |
申请号 |
US201213543438 |
申请日期 |
2012.07.06 |
申请人 |
LU WEN-HSIUNG;CHENG MING-DA;LIN CHIH-WEI;LIU CHUNG-SHI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LU WEN-HSIUNG;CHENG MING-DA;LIN CHIH-WEI;LIU CHUNG-SHI |
分类号 |
H01L23/488 |
主分类号 |
H01L23/488 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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