发明名称 |
SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER |
摘要 |
To improve the flatness of the surface and improve the reliability of a semiconductor device when expitaxially growing semiconductor crystal layers of different types on a single silicon wafer, provided is a semiconductor wafer which includes: a base wafer having a silicon crystal in the surface thereof, the silicon crystal having a first dent and a second dent; a first Group IVB semiconductor crystal located in the first dent and exposed; a second Group IVB semiconductor crystal located in the second dent; and a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal in the second dent and exposed.
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申请公布号 |
US2012267688(A1) |
申请公布日期 |
2012.10.25 |
申请号 |
US201213495746 |
申请日期 |
2012.06.13 |
申请人 |
YAMANAKA SADANORI;TAKADA TOMOYUKI;HATA MASAHIKO;SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
YAMANAKA SADANORI;TAKADA TOMOYUKI;HATA MASAHIKO |
分类号 |
H01L29/267;H01L21/20;H01L29/06 |
主分类号 |
H01L29/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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