| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer which is cut out from an ingot pulled by a method for pulling a silicon single crystal where the local variation of the oxygen concentration in the pulled silicon single crystal is suppressed by controlling the proportion of a lateral magnetic field component and a vertical magnetic field component in a magnetic field in a horizontal direction applied by using a saddle-shaped coil and which is provided with outer periphery grinding and chamfering. <P>SOLUTION: The diameter of the ingot of the silicon single crystal is 450 mm or more. In the silicon single crystal wafer, the variation (difference of in-plane oxygen concentration/average value of in-plane oxygen concentration) of the oxygen concentration except a region of 10% from an outer periphery of the diameter of the silicon single crystal wafer after the chamfering is 5% or less. The silicon single crystal wafer is used for wafers having a large diameter of 450 mm or 675 mm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
