发明名称 |
METHOD FOR GROWTH OF HIGH QUALITY GRAPHENE FILMS |
摘要 |
The present application relates generally to methods for growth of high quality graphene films. In particular, a method is provided for forming a graphene film using a modified chemical vapor deposition process using an oxygen-containing hydrocarbon liquid precursor. Desirably, the graphene films are a single-layer and have a single grain continuity of at least 1 μm2.
|
申请公布号 |
US2012269717(A1) |
申请公布日期 |
2012.10.25 |
申请号 |
US201113091701 |
申请日期 |
2011.04.21 |
申请人 |
RADHAKRISHNAN GOURI;ADAMS PAUL MICHAEL;THE AEROSPACE CORPORATION |
发明人 |
RADHAKRISHNAN GOURI;ADAMS PAUL MICHAEL |
分类号 |
C01B31/04;B82Y30/00;C30B23/06 |
主分类号 |
C01B31/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|