Producing silicon ingot, comprises providing melt form molten semiconductor material in crucible, immersing germ crystal body held at holding element into melt, placing germ crystal body in crucible, and performing crystallization process

摘要

The crystal manufacturing method comprises: providing a melt (3) form a molten semiconductor material in a crucible (4); immersing a germ crystal body (1) held at a holding element (2) into the melt; placing the germ crystal body in the crucible; performing a crystallization process; and releasing the germ crystal body of the holding element, where the semiconductor material from the molten state starting from the germ crystal body partially or completely passes into a solid state and a semiconductor crystal is formed. The germ crystal body comprises a connection portion (11). The crystal manufacturing method comprises: providing a melt (3) form a molten semiconductor material in a crucible (4); immersing a germ crystal body (1) held at a holding element (2) into the melt; placing the germ crystal body in the crucible; performing a crystallization process; and releasing the germ crystal body of the holding element, where the semiconductor material from the molten state starting from the germ crystal body partially or completely passes into a solid state and a semiconductor crystal is formed. The germ crystal body comprises a connection portion (11), and is connected with the holding element, where the connection portion of the germ crystal body is melted: for releasing the germ crystal body by the holding element; and due to the immersion into the melt. The connection portion is formed by a geometric taper of the germ crystal body. The germ crystal body is preheated before the immersion into the melt. The melt comprises a fusion process, in which the semiconductor material arranged in the crucible is melted. The germ crystal body is maintained during the fusion process in an unheated holding portion outside of the crucible. The germ crystal body is arranged: at a distal portion of the crucible opposite to a crucible opening; and on a crucible bottom of the crucible. The crystallization process is performed by a time varying temperature distribution in horizontal direction parallel to the crucible bottom, or in radial direction along the crucible bottom and subsequently in vertical direction parallel to a crucible wall. An independent claim is included for a crystal manufacturing apparatus.