| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a laminated solid state image sensor capable of failure prevention and reduction in pixel size in the case of entrance of excessive light. <P>SOLUTION: In a solid state imaging sensor, pixels 100 each including a photoelectric conversion part P formed above a semiconductor substrate and a MOS type signal read circuit S formed on the semiconductor substrate are arranged in an array. The signal read circuit S includes a charge storage part 4 storing an electron hole migrating to a pixel electrode 1, an output transistor 7 with a gate electrode 71 electrically connected with the charge storage part 4 and outputting a signal corresponding to potential of the charge storage part 4, and a protective transistor 6 preventing potential of the gate electrode 71 from increasing to a predetermined value or more. The protective transistor 6 has a source region 62 connected to a power source. The output transistor 7 has a drain region 72 connected to the power source. The source region 62 and the drain region 72 are in common between neighboring two pixels 100 such that one source region 62 and one drain region 72 are included in each of the neighboring two pixels 100. <P>COPYRIGHT: (C)2013,JPO&INPIT |
