发明名称 METHOD FOR MAKING EPITAXIAL STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for making an epitaxial structure. <P>SOLUTION: A method for making an epitaxial structure includes a first step of providing a substrate having at least one crystal face, a second step of placing a carbon nanotube layer with a plurality of gaps on the crystal face of the substrate so that part of the crystal face of the substrate is exposed by the gaps of the carbon nanotube layer, a third step of growing an epitaxial layer on the crystal face of the substrate, to cover the carbon nanotube layer, and a fourth step of removing the substrate and the carbon nanotube layer. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012209532(A) 申请公布日期 2012.10.25
申请号 JP20110238666 申请日期 2011.10.31
申请人 QINGHUA UNIV;HON HAI PRECISION INDUSTRY CO LTD 发明人 GI YO;FAN FENG-YAN
分类号 H01L21/205;C23C16/01;C23C16/34 主分类号 H01L21/205
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