发明名称 EPITAXIAL STRUCTURE AND METHOD FOR MAKING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide an epitaxial structure and a method for making the same. <P>SOLUTION: A method for making an epitaxial structure includes a first step of providing a substrate having at least one epitaxial growth surface, a second step of placing a fist carbon nanotube layer with a plurality of gaps on the epitaxial growth surface of the substrate, a third step of growing a first epitaxial layer on the epitaxial growth surface of the substrate, to enclose the first carbon nanotube layer, a fourth step of placing a second carbon nanotube layer with a plurality of gaps on a surface of the first epitaxial layer, the surface being an epitaxial growth surface of the first epitaxial layer, and a fifth step of growing a second epitaxial layer on the epitaxial growth surface of the first epitaxial layer, to enclose the second carbon nanotube layer. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012209533(A) 申请公布日期 2012.10.25
申请号 JP20110238667 申请日期 2011.10.31
申请人 QINGHUA UNIV;HON HAI PRECISION INDUSTRY CO LTD 发明人 GI YO;FAN FENG-YAN
分类号 H01L21/205;C23C16/34;C30B25/04;C30B29/38 主分类号 H01L21/205
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