| 摘要 |
A non-volatile memory device includes a bank including a plurality of unit cells so as to output sensed data to a global input/output (I/O) line, and a data input/output (I/O) unit configured to store the same data as that of a unit cell contained in a bank in a register, store external input data in the register during a write operation, and output data stored in the register to an external part during a read operation.
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