| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device that can hardly cause reduction in the light-emitting efficiency while improving the crystallinity of an optical semiconductor layer. <P>SOLUTION: A light-emitting device of the present invention comprises: an n-type gallium nitride-based semiconductor layer 3; a light-emitting layer 4 that is provided on the n-type gallium nitride-based semiconductor layer 3 and contains a gallium nitride-based semiconductor; and a p-type gallium nitride-based semiconductor layer 6 that is provided on the light-emitting layer 4 and has a blocking layer 5 contacting the light-emitting layer 4. The blocking layer 5 is formed by stacking electron blocking layers 5a that contain magnesium and hole tunneling layers 5b that have a lower magnesium concentration than the electron blocking layers 5a and have a thickness of 3 nm or less. Since the blocking layer 5 has such the hole tunneling layers 5b, reduction in the light-emitting efficiency can be hardly caused while improving the crystallinity of an optical semiconductor layer 7. <P>COPYRIGHT: (C)2013,JPO&INPIT |
