| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a deposition device capable of filling a recessed part formed in a substrate at a high throughput while reducing formation of a void. <P>SOLUTION: There is provided the deposition device including: a turntable which includes a substrate placement part where a substrate is placed, and is rotatably provided in a vacuum container; a first reaction gas supply part which supplies first reaction gas to a surface of the turntable where the substrate placement part is formed; a second reaction gas supply part which is provided apart from the first gas supply part in a peripheral direction of the turntable, and supplies second reaction gas reacting with the first reaction gas to the surface of the turntable where the substrate placement part is formed; an activation gas supply part which is provided apart from the first and second reaction gas supply parts in the peripheral direction of the turntable, and activates and supplies reforming gas for reforming reactive products of the first reaction gas and second reaction gas and etching gas for etching to the surface of the turntable where the substrate placement part is formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
