发明名称 |
CLEANING METHOD AND DEPOSITION METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a cleaning method that can prevent polyimide from being carbonized and remove the polyimide without leaving particles in a deposition container. <P>SOLUTION: There is provided the cleaning method for a deposition apparatus 10 which forms a polyimide film on a substrate carried in a deposition container 60 by supplying first material gas produced by gasifying a first raw material consisting of acid dihydride and second material gas produced by gasifying a second material consisting of diamine into the deposition container 60. While an oxygen atmosphere is generated in the deposition container 60, the deposition container 60 is heated by a heating mechanism 62 up to a temperature of 360 to 540°C to oxidize and remove the polyimide remaining in the deposition container 60. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012209393(A) |
申请公布日期 |
2012.10.25 |
申请号 |
JP20110073192 |
申请日期 |
2011.03.29 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
IDO YASUYUKI;SUGITA KIPPEI;YAMAGUCHI TATSUYA |
分类号 |
H01L21/31;C23C14/00;C23C14/12;C23C16/42;H01L21/312 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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