发明名称 CLEANING METHOD AND DEPOSITION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a cleaning method that can prevent polyimide from being carbonized and remove the polyimide without leaving particles in a deposition container. <P>SOLUTION: There is provided the cleaning method for a deposition apparatus 10 which forms a polyimide film on a substrate carried in a deposition container 60 by supplying first material gas produced by gasifying a first raw material consisting of acid dihydride and second material gas produced by gasifying a second material consisting of diamine into the deposition container 60. While an oxygen atmosphere is generated in the deposition container 60, the deposition container 60 is heated by a heating mechanism 62 up to a temperature of 360 to 540&deg;C to oxidize and remove the polyimide remaining in the deposition container 60. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012209393(A) 申请公布日期 2012.10.25
申请号 JP20110073192 申请日期 2011.03.29
申请人 TOKYO ELECTRON LTD 发明人 IDO YASUYUKI;SUGITA KIPPEI;YAMAGUCHI TATSUYA
分类号 H01L21/31;C23C14/00;C23C14/12;C23C16/42;H01L21/312 主分类号 H01L21/31
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