A SHALLOW TRENCH ISOLATION LAYER STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A device isolation film structure and a forming method thereof are provided to implement a high insulation property with low costs by forming the device isolation film structure in a trench without a void. CONSTITUTION: First trenches(108a) with a first width and second trenches(108b) with a second width are formed by etching a substrate between a first gate structure and a second gate structure. A first insulation film pattern and a second insulation film pattern are formed using silicon oxide. A third preliminary film pattern and a fourth insulation film pattern are formed by depositing polysilazane based inorganic SOG materials which are different from the first insulation film pattern and the second insulation film pattern to fill the first and second trenches. A third insulation film pattern(125a) is formed by removing a part of the third preliminary film pattern. [Reference numerals] (AA) First region; (BB) Second region