发明名称 |
Controlled value reference signal of resistance based memory circuit |
摘要 |
<p>A memory circuit comprises a magnetoresistive random access memory MRAM reference bit cell comprising a first current clamp and a first load circuit. The reference bit cell receives a control input at a control terminal of the first current clamp and outputs, in response to the control input, a controlled value reference voltage. The memory circuit also comprises a magnetoresistive random access memory MRAM data bit cell comprising a second load circuit, an MRAM load generator cell for generating a load control signal, the load control signal being supplied to the first load circuit and the second load circuit, and a sense amplifier. The sense amplifier comprises a first input coupled to the at least one magnetoresistive random access memory MRAM bit cell and a second input adapted to receive an input signal comprising the controlled value reference voltage.</p> |
申请公布号 |
EP2515305(A1) |
申请公布日期 |
2012.10.24 |
申请号 |
EP20120176957 |
申请日期 |
2009.06.23 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
JUNG, SEONG-OOK;KIM, JI-SU;SONG, JEE-HWAN;KANG, SEUNG H;YOON, SEI SEUNG |
分类号 |
G11C11/16;G11C13/00 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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