发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>Provided is a method of manufacturing a semiconductor device capable of preventing a relative displacement of the positions between a range where impurity ions are injected and a range where charged particles are injected. The method of manufacturing the semiconductor device includes: an impurity ion injecting step of irradiating impurity ions in a state in which a mask is disposed between an impurity ion irradiation apparatus and a semiconductor substrate; and a charged particle injecting step of irradiating charged particles to form a short carrier lifetime region, in a state in which the mask is disposed between a charged particle irradiation apparatus and the semiconductor substrate. A relative positional relationship between the mask and the semiconductor substrate is not changed from a beginning of one of the to a completion of both of the impurity ion injecting step and the charged particle injecting step.</p> |
申请公布号 |
EP2515328(A1) |
申请公布日期 |
2012.10.24 |
申请号 |
EP20090852269 |
申请日期 |
2009.12.15 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
IWASAKI SHINYA;KAMEI AKIRA |
分类号 |
H01L27/07;H01L21/263;H01L21/266;H01L21/761;H01L29/32;H01L29/739;H01L29/861 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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