SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING SYSTEM

摘要

PURPOSE: A semiconductor device, a manufacturing method thereof, and a substrate processing system are provided to prevent or suppress a rise of a threshold voltage by installing a TiAlN layer on a TiN layer. CONSTITUTION: A gate insulation layer(30) is formed on a semiconductor substrate. A TiN layer(40) is formed on the gate insulation layer. A TiAlN layer(43) is formed on the TiN layer. A silicon layer(45) is formed on the TiAN layer.