Wide bandgap field effect transistors with source connected field plates

摘要

A transistor, comprises an active region; a source electrode (18) in electrical contact with the active region; a drain electrode (20) in electrical contact with the active region; and a gate (22) in electrical contact with the active region between the source and drain electrodes. A spacer layer (26) is provided over at least a portion of the region between the gate and the drain electrode and between the gate and the source electrode. A field plate (30) on the spacer layer is electrically isolated from the active region and gate by the spacer layer formed at least partially over the gate. The field plate is electrically connected to the source electrode by at least one conductive path (32), each of which at least one conductive path is formed on the spacer layer and covers less than all the topmost surface of the spacer layer between the gate and source electrode.