| 摘要 |
PURPOSE: An etching method, an etching apparatus, and a storage medium are provided to selectively etch a silicon nitride layer with etchants and protect the surface of a silicon oxide layer by a silylation layer. CONSTITUTION: A silicon nitride layer and a silicon oxide layer are exposed to the surface of a substrate. A protection layer composed of a silylation layer is formed on the surface of the silicon oxide layer on the substrate by supplying silylation agents to the substrate with the exposed silicon nitride layer and silicon oxide layer. The silylation layer is removed by supplying a first rinse solution to the substrate. The silicon nitride layer is selectively etched by supplying the etchants to the substrate. [Reference numerals] (AA) Supplying silylation agents; (BB) Supplying IPA; (CC) Supplying a first rinse solution; (DD) Supplying an etchant; (EE) Supplying a second rinse solution; (FF) Drying(IPA for drying); (GG) Removing a silylation film by UV radiation
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