发明名称 CMOS circuit and semiconductor device with multiple operation mode biasing
摘要 There is provided an output stage circuit including such MOSTs (M) that when their gates and sources are respectively set to an equal voltage, subthreshold leakage currents substantially flow between their drains and sources, wherein upon its deactivation, a voltage is applied to the gate of each of the MOSTs (M) in such a manner than a reverse bias is applied between the gate and source of the MOST (M). That is, when the MOST (M) is of a p channel type, a voltage higher than that of a p type source is applied to its gate. When the MOST (M) is of an n channel type, a voltage lower than that of an n type source is applied to its gate. Upon activation of the circuit, the MOST is held in a reverse bias state or controlled to a forward bias state according to an input voltage. A CMOS circuit and a semiconductor device can be realized each of which is small in leakage current even though its threshold voltage is low and which is operated at high speed and with a small voltage amplitude.
申请公布号 US8294510(B2) 申请公布日期 2012.10.23
申请号 US20070521263 申请日期 2007.12.11
申请人 ITOH KIYOO;YAMAOKA MASANAO;RENESAS ELECTRONICS CORPORATION 发明人 ITOH KIYOO;YAMAOKA MASANAO
分类号 G05F1/10 主分类号 G05F1/10
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