发明名称 |
Structure and method for hard mask removal on an SOI substrate without using CMP process |
摘要 |
A hard mask material is removed from an SOI substrate without using a chemical mechanical polish (CMP) process. A blocking material is deposited on a hard mask material after a deep trench reactive ion etch (RIE) process. The blocking material on top of the hard mask material is removed. A selective wet etching process is used to remove the hard mask material. Trench recess depth is effectively controlled. |
申请公布号 |
US8293625(B2) |
申请公布日期 |
2012.10.23 |
申请号 |
US201113009056 |
申请日期 |
2011.01.19 |
申请人 |
KWON OH-JUNG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KWON OH-JUNG |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|