发明名称 Resistance change memory
摘要 According to one embodiment, a resistance change memory includes a stacked layer structure stacked on a semiconductor substrate in order of a first conductive line, a first variable resistance element, a second conductive line, a second variable resistance element, . . . a n-th conductive line, a n-th variable resistance element and a (n+1)-th conductive line, where n is a natural number equal to or larger than 2, and a first to a n-th drivers which drives the first to the (n+1)-th conductive lines. The odd-numbered conductive lines are extends in a first direction along a surface of the semiconductor substrate. The even-numbered conductive lines are extends in a second direction along the surface of the semiconductor substrate. Sizes of the first to (n+1)-th drivers become large gradually from the first driver to the (n+1)-th driver.
申请公布号 US8295070(B2) 申请公布日期 2012.10.23
申请号 US20100968914 申请日期 2010.12.15
申请人 FUKANO GOU;KABUSHIKI KAISHA TOSHIBA 发明人 FUKANO GOU
分类号 G11C5/02 主分类号 G11C5/02
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